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| A Product Line of Diodes Incorporated ZXMS6005SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFETTM MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance Nominal load current (VIN = 5V) Clamping Energy 200 m 2A 480 mJ SOT223 Package DESCRIPTION The ZXMS6005SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. S S D IN FEATURES * * * * * * * * * Compact high power dissipation package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating ORDERING INFORMATION DEVICE PART MARK REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMS6005SGTA ZXMS 6005S 7 12 embossed 1,000 units ZXMS6005SG Document Number DS32249 Rev. 1 - 2 1 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated FUNCTIONAL BLOCK DIAGRAM D Over Voltage Protection IN Human body ESD protection Over temperature protection Logic Over current protection dV/dt limitation S APPLICATIONS AND INFORMATION * * * * * * Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to selfprotect at low VDS. ZXMS6005SG Document Number DS32249 Rev. 1 - 2 2 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection Continuous Input Voltage Continuous Input Current -0.2VVIN6V VIN<-0.2V or VIN>6V Operating Temperature Range Storage Temperature Range Power Dissipation at TA =25C (a) Linear Derating Factor Power Dissipation at TA =25C (b) Linear Derating Factor Pulsed Drain Current @ VIN=3.3V Pulsed Drain Current @ VIN=5V Continuous Source Current (Body Diode) (a) Pulsed Source Current (Body Diode) Unclamped single pulse inductive energy, Tj=25C, ID=0.5A, VDD=24V Electrostatic Discharge (Human Body Model) Charged Device Model THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) Junction to Case (c) NOTES (a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. (b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. (c) Thermal resistance between junction and the mounting surfaces of drain and source pins. SYMBOL VDS VDS(SC) VIN IIN LIMIT 60 24 -0.5 ... +6 UNIT V V V mA No limit IIN 2 Tj, Tstg PD -40 to +150 -55 to +150 1.0 8.0 PD 1.6 12.8 IDM IDM IS ISM EAS VESD VCDM 5 6 2.5 10 480 4000 1000 C C W mW/C W mW/C A A A A mJ V V SYMBOL RJA RJA RJC VALUE 125 83 39 UNIT C/W C/W C/W ZXMS6005SG Document Number DS32249 Rev. 1 - 2 3 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated RECOMMENDED OPERATING CONDITIONS The ZXMS6005SG is optimised for use with C operating from 3.3V and 5V supplies. Symbol VIN TA VIH VIL VP Description Input voltage range Ambient temperature range High level input voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral supply voltage (voltage to which load is referred) Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 24 Units V C V V V CHARACTERISTICS Max Power Dissipation (W) 10 ID Drain Current (A) Limited by RDS(on) Limited by Over-Current Protection 1ms 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 See Note (a) See Note (b) 1 DC 1s 100ms Single Pulse T amb=25C See Note (a) 10ms Limit of s/c protection 100m 10m 1 10 VDS Drain-Source Voltage (V) Temperature (C) Safe Operating Area Thermal Resistance (C/W) 120 100 80 D=0.5 Tamb=25C See Note (a) Derating Curve Maximum Power (W) 100 Single Pulse T amb=25C See Note (a) 60 40 20 0 100 1m 10m 100m 1 Single Pulse D=0.2 D=0.05 D=0.1 10 1 100 1m 10m 100m 1 10 100 1k 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXMS6005SG Document Number DS32249 Rev. 1 - 2 4 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Static Characteristics SYMBOL MIN TYP MAX UNIT CONDITIONS Drain-Source Clamp Voltage Off state Drain Current Off state Drain Current Input Threshold Voltage Input Current Input Current Input Current while over temperature active Static Drain-Source On-State Resistance Static Drain-Source On-State Resistance Continuous Drain Current (a) Continuous Drain Current (a) Continuous Drain Current (b) Continuous Drain Current (b) Current Limit (d) Current Limit (d) Dynamic Characteristics Turn On Delay Time Rise time Turn Off Delay Time Fall Time Notes: VDS(AZ) IDSS IDSS VIN(th) IIN IIN 60 65 70 1 2 V A uA V A A A m ID=10mA VDS=12V, VIN=0V VDS=36V, VIN=0V VDS=VGS, ID=1mA VIN=+3V VIN=+5V VIN=+5V VIN=+3V, ID=1A 0.7 1 60 120 1.5 100 200 300 RDS(on) 170 250 RDS(on) 150 200 m VIN=+5V, ID=1A ID ID ID ID ID(LIM) ID(LIM) 1.4 1.6 1.9 2.0 2.2 3.3 5 7 A A A A A A VIN=3V; TA=25C VIN=5V; TA=25C VIN=3V; TA=25C VIN=5V; TA=25C VIN=+3V, VIN=+5V td(on) tr td(off) ff 6 14 34 19 s s s s VDD=12V, ID=1A, VGS=5V (d) The drain current is restricted only when the device is in saturation (see graph `typical output characteristic'). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. ZXMS6005SG Document Number DS32249 Rev. 1 - 2 5 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated PARAMETER Over-temperature Protection Thermal Overload Trip Temperature (e) Thermal hysteresis (e) Note: SYMBOL MIN TYP MAX UNIT CONDITIONS TJT 150 175 10 C C (e) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods.. ZXMS6005SG Document Number DS32249 Rev. 1 - 2 6 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated TYPICAL CHARACTERISTICS 9 ID Drain Current (A) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5V 4V 4.5V TA = 25C 120 IIN Input Current (A) 100 80 60 40 20 0 0 1 2 3 4 5 3.5V 3V 2.5V 2V VIN 1.5V 5 6 7 8 9 10 11 12 VDS Drain-Source Voltage (V) VIN Input Voltage (V) Typical Output Characteristic RDS(on) On-Resistance () ID = 1A Input Current vs Input Voltage 1.4 VTH Threshold Voltage (V) 0.4 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 VIN = VDS ID = 1mA 0.2 TJ = 150C TJ = 25C 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 75 100 125 150 VIN Input Voltage (V) TJ Junction Temperature (C) On-Resistance vs Input Voltage RDS(on) On-Resistance () 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -75 -50 -25 0 25 50 75 100 125 150 VIN = 5V VIN = 3V Threshold Voltage vs Temperature 10 IS Source Curent (A) TJ=150C 1 T J=25C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 TJ Junction Temperature (C) VSD Source-Drain Voltage (V) On-Resistance vs Temperature Reverse Diode Characteristic ZXMS6005SG Document Number DS32249 Rev. 1 - 2 7 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated Drain-Source Voltage (V) 12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300 VIN ID=1A VDS Drain-Source Voltage (V) 12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300 VIN VDS ID=1A Time (s) Time (s) Switching Speed 8 6 4 2 0 -2 VIN = 5V VDS = 15V RD = 0 Switching Speed ID Drain Current (A) 0 2 4 6 8 10 12 Time (ms) Typical Short Circuit Protection ZXMS6005SG Document Number DS32249 Rev. 1 - 2 8 of 9 www.diodes.com June 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com ZXMS6005SG Document Number DS32249 Rev. 1 - 2 9 of 9 www.diodes.com June 2010 (c) Diodes Incorporated |
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